Floadia Corporation has launched its latest automotive embedded flash IP, G1, developed on TSMC's 180BCD Gen3 process platform. The new IP aims to meet the demanding reliability and performance standards required for next-generation automotive applications.
The G1 automotive eFlash IP integrates a 256KB program flash macro and a 1KB data flash macro utilizing SONOS technology. This offers a robust and cost-efficient non-volatile memory solution for automotive integrated circuits (ICs). Notably, the G1 eFlash process is incorporated atop TSMC's standard 180BCD Gen3 platform without modifying the original process design kit (PDK). This allows clients to use the existing qualified PDK while easily integrating embedded flash into their designs. The IP has successfully completed AEC-Q100 Grade 1 full qualification on TSMC 180BCD Gen3, thereby confirming its resilience under severe automotive operating conditions and indicating its production readiness.
The eFlash IP comprises a 256KB program flash (PFlash) for code storage, alongside a 1KB data flash (DFlash) that boasts 100K program/erase endurance, delivering EEPROM-like functionality for data storage. Both PFlash and DFlash are optimized for rapid operation, achieving a maximum erase time of less than 20 milliseconds. This enhances system performance and reduces firmware update time in automotive systems.
To facilitate system integration, the G1 eFlash IP includes an internal charge pump, eliminating the necessity for external high-voltage circuitry. Additionally, both PFlash and DFlash are fitted with an 8 parity-bit code for ECC interface to ensure high data integrity and reliability over the device's lifetime.
With its established SONOS-based architecture, swift erase performance, and comprehensive automotive qualification, Floadia's G1 eFlash IP on TSMC 180BCD Gen3 is suited to a broad array of automotive applications. These include power management ICs, motor drivers, body electronics, and other automotive systems.
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