ROHM Co., Ltd. has announced the development of its fourth-generation 650V Insulated Gate Bipolar Transistors (IGBTs), designed to enhance performance in automotive electric compressors and HV heaters, as well as inverters for industrial equipment.
The new IGBTs, featuring a low conduction loss of VCE(sat)=1.55V, are tailored for 650V applications. They offer high short-circuit tolerance while adhering to the AEC-Q101 automotive reliability standard.
As electric vehicles transition to higher voltages, silicon carbide (SiC) is increasingly used in high-power applications such as traction inverters. Meanwhile, 650V IGBTs remain a mainstay in auxiliary systems and industrial equipment, where they are valued for energy savings and compact design requirements.
To meet these evolving demands, ROHM has revamped its IGBT device structure, manufacturing process, and edge termination structure. The fourth-generation products deliver low-loss characteristics and short-circuit tolerance, increasing current density while reducing conduction and switching losses.
These products are capable of withstanding short-circuits for 7 microseconds at a junction temperature of 25C, which enhances application efficiency and reliability. The product range includes 12 models in the TO-247N package, categorized under the RGAxxTS65HR and RGAxxTS65EHR series, along with 10 bare wafer products under the SG83xxWN series. Additional developments include products in the TO-247-4L package, namely the RGAxxTR65HR and RGAxxTR65EHR series.
ROHM is poised to further expand the lineup, including compact, surface-mount IGBTs in the TO-263L package and top-side cooling (TSC) packages, continuing to support increased efficiency and miniaturization in automotive and industrial equipment.